ac08dsma,AC08FSMA description the ac08dsma and AC08FSMA are resin insulation type triacs with an effective current of 8 a (t c = 88c). these products are covered with resin mold on the entire case and are electrically insulated with electrodes, giving them a considerable advantage over conventional triacs when mounting on a heatsink board or performing high-density mounting. these products features ratings and electrical characteristics equal to to-220ab package triac and a high reliability design. features ? insulation type triac fully covered with resin on the entire case other than electrode leads ? insulation voltage and conduction equal to conventional mica and polyester film ? can be replaced with to-220ab package ? high allowable on-current when using a single unit applications non-contact switches of motor speed control, heater temperature control, lamp light control package drawing (unit: mm) 10.5 max. 7 ?.2 3.2 ?.2 3.0 max. 1.3 ?.2 0.8 ?.1 2.54 typ. 2.54 typ. 1.5 ?.2 5 ?.2 13.5 min. 12 ?.2 5 ?.1 17 ?.2 2.8 ?.2 4.7 max. 2.5 ?.1 0.5 ?.1 123 triac 1: t 1 2: t 2 3: gate standard weight: 2 g * * : t c test bench-mark www.kersemi.com
ac08dsma,AC08FSMA maximum ratings parameter symbol ac08dsma AC08FSMA unit remarks non-repetitive peak off-state voltage v dsm 500 700 v ? repetitive peak off-state voltage v drm 400 600 v ? effective on-state current i t(rms) 8 (t c = 88c) a refer to figure 11 and 12 . surge on-state current i tsm a refer to figure 2 . 80 (50 hz 1 cycle) 88 (60 hz 1 cycle) fusing current i t 2 dt 28 (1 ms t 10 ms) a 2 s ? critical rate rise of on-state current di t /dt 50 a/ s ? peak gate power dissipation p gm 5.0 (f 50 hz, duty 10%) w ? average gate power dissipation p g(av) 0.5 w ? peak gate current i gm 3 (f 50 hz, duty 10%) a ? junction temperature t j ? 40 +125 c ? storage temperature t stg ? 55 +150 c ? electrical characteristics (t j = 25 c) parameter symbol conditions min. typ. max. unit remarks repetitive peak off-state current i drm v dm = v drm t j = 25c ? ? 100 a ? t j = 125c ? ? 2 ma ? on-state voltage v tm i tm = 10 a ? ? 1.6 v refer to figure 1 . gate trigger current mode i i gt v dm = 12 v, t 2 +, g+ ? ? 20 ma refer to figure 4 . ii r l = 30 ? t 2 ? , g+ ? ? ? iii t 2 ? , g ? ? ? 20 iv t 2 +, g ? ? ? 20 gate trigger voltage mode i v gt v dm = 12 v, t 2 +, g+ ? ? 1.5 v refer to figure 4 . ii r l = 30 ? t 2 ? , g+ ? ? ? iii t 2 ? , g ? ? ? 1.5 iv t 2 +, g ? ? ? 1.5 gate non-trigger voltage v gd t j = 125c, v dm = 2 1 v drm 0.3 ? ? v ? holding current i h v dm = 24 v, i tm = 10 a ? 30 ? ma ? critical rate rise of off-state voltage dv/dt t j = 125c, v dm = 3 2 v drm ? 100 ? v / s ? commutating critical rate rise of off-state voltage (dv/dt)c t j = 125c, (di t /dt)c = ? 4 a/ms, v d = 400 v 10 ? ? v / s ? thermal resistance note r th(j-c) junction-to-case ac ? ? 3.7 c/w refer to figure 13 . www.kersemi.com
ac08dsma,AC08FSMA typical characteristics figure 1. i t vs. t characteristic figure 2. i tsm rating i t - on-state current - a 100 10 1.0 0.1 012345 max. t c = 125?c 25?c i tsm - surge on-state current - a 140 120 100 80 60 40 20 0 110 5 50 100 0 n = 1 i tsm 2 initial t j = 125?c 50 hz 60 hz t - on-state voltage - v cycles - n figure 3. gate rating figure 4. gate characteristic v g - gate voltage - v 10 8 6 4 2 0 0 3.0 2.5 2.0 1.5 1.0 0.5 t j = ? 40 to +125?c p gm = 5 w f 50 hz duty 10% p g(av) = 0.5 w v gt - gate trigger voltage - v 2.0 1.5 1 0.5 0 040 30 20 10 mode i, iii, iv t a = ? 40?c 25?c 125?c i g - gate current - a i gt - gate trigger current - ma figure 5. i gt vs. t a characteristic figure 6. v gt vs. t a characteristic i gt - gate trigger current - ma 1000 100 10 1 ? 40 120 80 40 0 mode i, iii, iv v gt - gate trigger voltage - v 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 ? 40 120 80 40 0 mode i, iii, iv t a - ambient temperature - c t a - ambient temperature - c www.kersemi.com
ac08dsma,AC08FSMA figure 7. i gt vs. characteristic figure 8. gt vs. characteristic i gt - gate trigger current - ma 10000 1000 100 10 1 1 1000 100 10 mode i, iii, iv t a = 25?c gt - gate trigger voltage - v 5 4 3 2 1 0 1 1000 100 10 mode i, iii, iv t a = 25?c - pulse width - s - pulse width - s figure 9. i h vs. t a characteristic figure 10. p t(av) vs. i t(rms) characteristic i h - holding current - ma 1000 100 10 1 ? 20 100 120 80 60 40 20 0 12 11 10 9 8 7 6 5 4 3 2 1 0 012 5 4 3 2 1611 10 9 8 7 t a - ambient temperature - c p t(av) - on-state average power dissipation - w i t(rms) - effective on-state current - a figure 11. t c vs. i t(rms) rating figure 12. t a vs. i t(rms) rating t c - case temperature - c 140 120 100 80 60 40 20 0 012 5 4 3 2 1611 10 9 8 7 t a - ambient temperature - c 140 120 100 80 60 40 20 0 0 2.0 1.0 i t(rms) - effective on-state current - a i t(rms) - effective on-state current - a www.kersemi.com
ac08dsma,AC08FSMA figure 13. z th characteristic z th - transient thermal impedance - c/w 100 10 1 0.1 10 k 100 k 1 k 100 10 1 0.1 junction to ambient junction to case cycles (50 hz) www.kersemi.com
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